Guangzhou Topfast Technology Co., Ltd.
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N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 400 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Continuous Drain Current (A) | 10 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (MOhm) | 600@10V |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Input Capacitance @ Vds (pF) | 526@100V |
| Maximum Power Dissipation (mW) | 33000 |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 18 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | TO-220FP |
| Pin Count | 3 |
| Standard Package Name | TO-220 |
| Mounting | Through Hole |
| Package Height | 16.12(Max) |
| Package Length | 10.63(Max) |
| Package Width | 4.83(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Through Hole |
| Part number | SIHF10N40D-E3 |
| Base part number | SIHF10N40 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |