Guangzhou Topfast Technology Co., Ltd.
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Product Description
BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW.
In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more
protection by storing the loose parts in an outer tube.
This MOSFET transistor has an operating temperature range of -40 °C to 175 °C.
This N channel MOSFET transistor operates in enhancement mode.
Specification:
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Category
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Discrete Semiconductor Products
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Transistors - FETs, MOSFETs - Single
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Mfr
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Infineon Technologies
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Series
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TEMPFET®
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Package
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Tube
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Part Status
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Obsolete
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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49 V
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Current - Continuous Drain (Id) @ 25°C
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80A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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6.5mOhm @ 36A, 10V
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Vgs(th) (Max) @ Id
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2V @ 240µA
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Gate Charge (Qg) (Max) @ Vgs
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232 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4800 pF @ 25 V
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FET Feature
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Temperature Sensing Diode
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Power Dissipation (Max)
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300W (Tc)
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Operating Temperature
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-40°C ~ 175°C (TJ)
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Mounting Type
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Through Hole
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Supplier Device Package
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P-TO220-7-230
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Package / Case
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TO-220-7
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| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Part number | BTS282Z E3230 |
| Base part number | BTS282Z |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |