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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

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Guangzhou Topfast Technology Co., Ltd.
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Province/State:guangdong
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H30R1602 Power Discrete Semiconductor Devices IHW30N160R2 IGBT Transistor

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Brand Name :Infineon Technoctifier Ilogies/International ReOR
Model Number :IHW30N160R2FKSA1
MOQ :1 piece
Payment Terms :T/T
Delivery Time :2~8 workdays
Brand :Infineon Technologies/International Rectifier IOR
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Model :IHW30N160R2FKSA1
MOQ :1 pc
Price :Negotiated
Delivery :2~8 workdays
Payment :T/T
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Product Description

IHW30N160R2 IGBTs Transistors H30R1602 Soft Switching Series Power Semiconductors IC IHW30N160R2FKSA1 Soft Switching Series

Applications:
• Inductive Cooking
• Soft Switching Applications

Description:

TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Specification:IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Part numberIHW30N160R2
Category
Discrete Semiconductor Products
 
Transistors - IGBTs - Single
Series
TrenchStop®
Package
Tube
IGBT Type
NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)
1600 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Power - Max
312 W
Switching Energy
4.37mJ
Input Type
Standard
Gate Charge
94 nC
Td (on/off) @ 25°C
-/525ns
Test Condition
600V, 30A, 10Ohm, 15V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-1


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