Guangzhou Topfast Technology Co., Ltd.

Best Service, Best PLC China's largest one-stop PLC sourcing centre

Manufacturer from China
Active Member
3 Years
Home / Products / Discrete Semiconductor Devices /

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

Contact Now
Guangzhou Topfast Technology Co., Ltd.
City:guangzhou
Province/State:guangdong
Country/Region:china
Contact Person:MsZhang
Contact Now

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

Ask Latest Price
Video Channel
Brand Name :Infineon Technologies/International Rectifier IOR
Model Number :IRLR3915TRPBF
MOQ :1 piece
Payment Terms :T/T
Delivery Time :2~8 workdays
Brand :Infineon Technologies/International Rectifier IOR
Certificate :/
Model :IRLR3915TRPBF
MOQ :1 pc
Price :Negotiated
Delivery :2~8 workdays
Payment :T/T
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

Product Description

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products

N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features :

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

Part number IRLR3915TRPBF
Base part number IRLR3915
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Category
Discrete Semiconductor Products
 
Transistors - FETs, MOSFETs - Single
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IRLR3915
Inquiry Cart 0