Guangzhou Topfast Technology Co., Ltd.
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Prduct Description
STGWA19NC60HD GWA19NC60HD
STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode
Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode
Description :
This device is an ultrafast IGBT.
It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Features
Low on-voltage drop (VCE(sat))
Very soft Ultrafast recovery anti-parallel diode
Applications
■ High frequency motor drives
■ SMPS and PFC in both hard switch and resonant topologies
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